A Comparative Study on different Proposed Nanotube TFETs

In these paper, we review some nanotube TFET based papers. Based on their device parameters , we decide which device is better for a particular application. Earlier designs gave impressive results, some of them were more focused on subthreshold swing (SSavg) and threshold voltage , whereas some designs are more focused on a good Ion current. We can also see the effect of high-k dielectric which used as gate oxide material for better tunneling current. Drain current(Ion) comparision with several TFET designs are given in this study.As unit parameters, the electric field, electric potential, and energy band diagram have all been observed.