Characterization and Optimization of Gate-All-Around Nanowire FETs for RF Applications

The Gate-All-Ground (GAA) n-channel nanowire field-effect transistor (NWFET) is simulated using visual TCAD, and DC analysis is carried out with optimized sub-20 nm nodes with a doping concentration of acceptor ions varied from 1x1017 cm⁻³ to 1x1019 cm⁻³. The proposed GAA NWFET device with a doping concentration of 1x1019 cm⁻³ gives excellent electrical characteristics with a subthreshold swing (SS) of about 59.57 mV/dec, a higher switching ratio (ION/IOFF) of 1010, and drain-induced barrier lowering (DIBL) of less than 10.19 mV/V. Further additional investigation was carried out by varying temperatures ranging from T = 300K to T = 500K; the sensitivity of the device was found to be better at higher temperatures. The proposed GAA NWFET gives a higher switching ratio, which will be suitable for RF applications. The suggested transistor could be a better device in the field of hightemperature and RF applications.