A Wideband Low Noise Amplifier for 5G Applications using 45nm CMOS Technology

This paper presents the design of a wideband Low Noise Amplifier (LNA) for 5G applications operating in the frequency range of 28 to 32 GHz. --- The LNA uses a two-stage cascode (CS-CG) topology with inductive source degeneration -- The simulated peak gain is 21dB. The noise figure is less than 2dB with input and output port reflection coefficient less than -10dB. The LNA consumes significantly lesser DC power making it suitable for low-power applications. The circuit is implemented with 45nm low-power CMOS technology and simulated in Keysight Advanced Design System (ADS).