A Review on Advanced CMOS High Frequency Class E
RF Power Amplifier in TSMC 90nm for 6G Wireless
Networks
Journal:
GRENZE International Journal of Engineering and Technology
Authors:
Chaithra S, Divya Rani M.S
Volume:
10
Issue:
2
Grenze ID:
01.GIJET.10.2.768
Pages:
6289-6296
Abstract
Millions of users worldwide are connected by cellular networks, which are the
foundation of contemporary telecommunications. A vital component in guaranteeing the
resilience and ecellular communication networks is radio frequency (RF) amplifiers. The rapid
evolution of wireless communication technologies has led to the emergence of the sixth
generation (6G) wireless communication systems. The main goal is to boost weak signals coming
from base stations, mobile devices, or other network elements so that communication works
smoothly over different distances and through obstructions. Cellular networking RF amplifiers
operate on the basis of integrated circuits or high-frequency transistors integrated circuits to
increase radio signals strength. This technique of amplification is essential for making up for
signal losses that occur during transmission through the atmosphere, wires, and antennas.
Furthermore, by increasing the cell's coverage area and signal quality, RF amplifiers help to
improve the cellular network's overall performance.
However, the design of radio frequency (RF) amplifiers for 6G presents a myriad of challenges
that must be overcome to fully exploit the potential of this next-generation wireless standard.
This paper focuses on addressing the key challenges faced by engineers and researchers in the
design of RF amplifiers for 6G wireless communication systems. As the operating frequency
bands for 6G extend into the millimeter-wave (mmWave) and giga hertz (GHz) to terahertz
(THz) ranges, traditional RF amplifier design approaches need to be reimagined. One of the
primary challenges is the inherent signal loss and propagation attenuation at these high
frequencies, demanding RF amplifiers with ultra-wide bandwidth and high gain.