Abstract

As we know that technology is improving day by day, due to this the number of transistors on chip should be doubled every year as per “Moore’s Law”. Hence, the size of transistor should be reduced to follow this scaling trend but using conventional planar MOSFET we cannot reduce the size of transistor to a limit. This is happened because of short channel effects (SCEs), which degrades MOSFET performance at lower dimensions. But there are many alternate structures like nanotube, nanowire, graphene etc. which will help in reducing the size of transistor by offering lower SCEs. In this paper, we will discuss about various types of nanowire MOSFETs and their analog performances like ION, IOFF, ION/IOFF current ratio. Beside this, an in depth review of doping control issues and the possible solutions in the nanowire MOSFETs are also presented.