Abstract

In Process technology, FinFETs are achieved many ways to control leakage current, dynamic current, short channel effects (SCE) and delay over MOSFET and CMOS. FETs are promising substitutes to tackle short channel effects (SCEs) better than the conventional planar MOSFET’s at deeply scaled technology nodes and thus enable continued transistor scaling. In this paper, reviewed the comparative study of FinFET with different parameter related to Channel Length, Leakage current, power and delay over MOSFET and CMOS.