An Analog Integrated Circuit Sensor for Detecting the Negative Bias Temperature Instability Effect in Deep Sub Micron Mos Devices

Conference: Fifth International Conference on Advances in Computer Engineering
Author(s): Jagadeesh Kumar P, Mini M G Year: 2014
Grenze ID: 02.ACE.2014.5.567 Page: 263-269

Abstract

Negative Bias Temperature Instability [NBTI] is an important reliability issue in Deep Sub Micron ( DSM ) MOS integrated circuits. NBTI cause shift in the threshold voltage of the PMOS devices when it is subjected to negative bias. With the increased use of analog mixed signal blocks in the present integrated circuits, an analog circuit based NBTI monitoring circuit finds significant scope in the design of sensor nodes to monitor the NBTI related issues and take appropriate control actions to minimize the effect. This article presents the use of analog circuits to monitor the effect of NBTI. The proposed circuits are more stable in operation as the signal current is not affected by the bias current of the circuits.

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ACE - 2014