Abstract

Due to scaling in CMOS technology, the leakage current increases and this\nincrease in leakage current affects the operation of SRAM. Therefore techniques for\nreducing the leakage current are acquiring more importance. Even though a high Vth\nCMOS can be considered as a solution to the mentioned problem, it will affect the\noperational speed of SRAM. Therefore a new technique consisting of a leakage current\nsensor and a compensation circuit is proposed. The leakage current sensor is used to sense\nthe voltage drop due to the leakage current and a compensation circuit is used to speed up\nthe read operation of SRAM when a leakage is detected. By the measurement results, the\nread delay is reduced by 28% and power is reduced by 40% when compared to\nuncompensated SRAM.