Device Level Variability in Fin Shapes for 14 Nm FinFET Technologies

Conference: International Conference on Soft Computing Applications in Wireless Communication
Author(s): Srishti, Jasmeet Kaur Year: 2017
Grenze ID: 02.SCAWC.2017.1.534 Page: 320-325


FinFET emerges as modification of MOSFET devices to overcome short channel effects and hence becomes hot\nresearch issue. The reported work says that Fin shape influences the FinFET performance. In this paper, various fin shapes of\nFinFET have been analyzed for 14 nm gate length. The different shapes of FinFET are developed by varying the top width of\nfin. Using 3D simulator visual TCAD, three shapes rectangular, trapezoidal and triangular are designed and simulated. The\nperformance of FinFET is calculated in terms of parameters like VTH, ION, IOFF, ION/IOFF ratio and subthreshold swing (SS)\nwhile keeping fin height, gate oxide thickness constant.


SCAWC - 2017