Abstract

Silicon Carbide (SiC) has superior material properties such as higher breakdown field, thermal conductivity and\nwider bandgap which makes SiC promising alternative for various semiconductor applications. SiC occurs in crystalline\nstructures or polytypes, having different properties of material. This paper presents 4H-SiC Double Gate MOSFET (DG\nMOSFET) in two forms, symmetric and asymmetric. The two designs were simulated for 22 nm, 40nm, 60 nm and 100 nm\nchannel length. The results of both designs show better performance in terms of the leakage and switching characteristics.