Performance Analysis of Symmetric and Asymmetric 4HSiC Based Double Gate MOSFET

Conference: International Conference on Soft Computing Applications in Wireless Communication
Author(s): Sudarshana Jilowa, Sandeep Singh Gill, Gurjot Kaur Walia Year: 2017
Grenze ID: 02.SCAWC.2017.1.533 Page: 312-319


Silicon Carbide (SiC) has superior material properties such as higher breakdown field, thermal conductivity and\nwider bandgap which makes SiC promising alternative for various semiconductor applications. SiC occurs in crystalline\nstructures or polytypes, having different properties of material. This paper presents 4H-SiC Double Gate MOSFET (DG\nMOSFET) in two forms, symmetric and asymmetric. The two designs were simulated for 22 nm, 40nm, 60 nm and 100 nm\nchannel length. The results of both designs show better performance in terms of the leakage and switching characteristics.


SCAWC - 2017